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Yamaguchi, Kenji; Udono, Haruhiko*
International Journal of Hydrogen Energy, 32(14), p.2726 - 2729, 2007/09
Times Cited Count:14 Percentile:36.71(Chemistry, Physical)no abstracts in English
Yamaguchi, Kenji; Shimura, Kenichiro; Udono, Haruhiko*; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Thin Solid Films, 508(1-2), p.367 - 370, 2006/06
Times Cited Count:12 Percentile:49.64(Materials Science, Multidisciplinary)no abstracts in English
Shimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Vacuum, 80(7), p.719 - 722, 2006/05
Times Cited Count:9 Percentile:34.26(Materials Science, Multidisciplinary)no abstracts in English
Shimura, Kenichiro; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Sasase, Masato*; Shamoto, Shinichi; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.673 - 675, 2006/01
Times Cited Count:6 Percentile:43.77(Instruments & Instrumentation)no abstracts in English
Shimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.676 - 678, 2006/01
Times Cited Count:0 Percentile:0.01(Instruments & Instrumentation)no abstracts in English
Igarashi, Shinichi*; Haraguchi, Masaharu*; Aihara, Jun; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Journal of Electron Microscopy, 53(3), p.223 - 228, 2004/08
Times Cited Count:4 Percentile:24.19(Microscopy)no abstracts in English
Yamaguchi, Kenji; Heya, Akira*; Shimura, Kenichiro; Katsumata, Toshinobu*; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.17 - 21, 2004/08
Times Cited Count:4 Percentile:25.1(Materials Science, Multidisciplinary)no abstracts in English
Yamaguchi, Kenji; Haraguchi, Masaharu*; Katsumata, Toshinobu*; Shimura, Kenichiro; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.13 - 16, 2004/08
Times Cited Count:10 Percentile:46.79(Materials Science, Multidisciplinary)no abstracts in English
Shimura, Kenichiro; Katsumata, Toshinobu*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.22 - 27, 2004/08
Times Cited Count:8 Percentile:40.98(Materials Science, Multidisciplinary)On the formation of -FeSi using Ion Beam Sputter Deposition (IBSD) method, sputter etching (SE) followed by thermal annealing is effective substrate treatment to obtain highly (100) oriented -FeSi on Si (100). However the best condition of these treatments are not yet known. In this work, the effect of sputter etching (SE) together with annealing process on the orientation of the film is investigated. In prior to the deposition of Fe, the substrate is irradiated by Ne ion with various energy and fluence followed by thermal annealing at 1027 K for 60 minuets. The overall results show the most suitable SE condition using Ne ion on IBSD method is the energy of 1keV with the fluence of 3010 ions/m.