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Journal Articles

Novel photosensitive materials for hydrogen generation through photovoltaic electricity

Yamaguchi, Kenji; Udono, Haruhiko*

International Journal of Hydrogen Energy, 32(14), p.2726 - 2729, 2007/09

 Times Cited Count:14 Percentile:36.71(Chemistry, Physical)

no abstracts in English

Journal Articles

Effect of thermal annealing on the photoluminescence from $$beta$$-FeSi$$_2$$ films on Si substrate

Yamaguchi, Kenji; Shimura, Kenichiro; Udono, Haruhiko*; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi

Thin Solid Films, 508(1-2), p.367 - 370, 2006/06

 Times Cited Count:12 Percentile:49.64(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Characterization of photoluminescence of $$beta$$-FeSi$$_2$$ thin film fabricated on Si and SIMOX substrate by IBSD method

Shimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi

Vacuum, 80(7), p.719 - 722, 2006/05

 Times Cited Count:9 Percentile:34.26(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Photoluminescence of $$beta$$-FeSi$$_2$$ thin film prepared by ion beam sputter deposition method

Shimura, Kenichiro; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Sasase, Masato*; Shamoto, Shinichi; Hojo, Kiichi

Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.673 - 675, 2006/01

 Times Cited Count:6 Percentile:43.77(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Modification of thin SIMOX film into $$beta$$-FeSi$$_2$$ via dry processes

Shimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi

Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.676 - 678, 2006/01

 Times Cited Count:0 Percentile:0.01(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Observation of iron silicide formation by plan-view transmission electron microscopy

Igarashi, Shinichi*; Haraguchi, Masaharu*; Aihara, Jun; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Journal of Electron Microscopy, 53(3), p.223 - 228, 2004/08

 Times Cited Count:4 Percentile:24.19(Microscopy)

no abstracts in English

Journal Articles

Effect of target compositions on the crystallinity of $$beta$$-FeSi$$_2$$ prepared by ion beam sputter deposition method

Yamaguchi, Kenji; Heya, Akira*; Shimura, Kenichiro; Katsumata, Toshinobu*; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.17 - 21, 2004/08

 Times Cited Count:4 Percentile:25.1(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effect of substrate temperature and deposited thickness on the formation of iron silicide prepared by ion beam sputter deposition

Yamaguchi, Kenji; Haraguchi, Masaharu*; Katsumata, Toshinobu*; Shimura, Kenichiro; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.13 - 16, 2004/08

 Times Cited Count:10 Percentile:46.79(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

The Role of sputter etching and annealing processes on the formation of $$beta$$-FeSi$$_{2}$$ thin films

Shimura, Kenichiro; Katsumata, Toshinobu*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.22 - 27, 2004/08

 Times Cited Count:8 Percentile:40.98(Materials Science, Multidisciplinary)

On the formation of $$beta$$-FeSi$$_{2}$$ using Ion Beam Sputter Deposition (IBSD) method, sputter etching (SE) followed by thermal annealing is effective substrate treatment to obtain highly (100) oriented $$beta$$-FeSi$$_{2}$$ on Si (100). However the best condition of these treatments are not yet known. In this work, the effect of sputter etching (SE) together with annealing process on the orientation of the film is investigated. In prior to the deposition of Fe, the substrate is irradiated by Ne$$^{+}$$ ion with various energy and fluence followed by thermal annealing at 1027 K for 60 minuets. The overall results show the most suitable SE condition using Ne$$^{+}$$ ion on IBSD method is the energy of 1keV with the fluence of 30$$times$$10$$^{19}$$ ions/m$$^{2}$$.

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